Towards n-type conductivity in hexagonal boron nitride

Shiqiang Lu; Peng Shen; Hongye Zhang; Guozhen Liu; Bin Guo; Yehang Cai; Han Chen; Feiya Xu; Tongchang Zheng; Fuchun Xu; Xiaohong Chen; Duanjun Cai; Junyong Kang

doi:10.1038/s41467-022-30762-1

Nature Communications (Jun 2022)

Towards n-type conductivity in hexagonal boron nitride

Shiqiang Lu,
Peng Shen,
Hongye Zhang,
Guozhen Liu,
Bin Guo,
Yehang Cai,
Han Chen,
Feiya Xu,
Tongchang Zheng,
Fuchun Xu,
Xiaohong Chen,
Duanjun Cai,
Junyong Kang

Affiliations

Shiqiang Lu: Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, College of Physical Science and Technology, Xiamen University
Peng Shen: Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, College of Physical Science and Technology, Xiamen University
Hongye Zhang: Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, College of Physical Science and Technology, Xiamen University
Guozhen Liu: Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, College of Physical Science and Technology, Xiamen University
Bin Guo: Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, College of Physical Science and Technology, Xiamen University
Yehang Cai: Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, College of Physical Science and Technology, Xiamen University
Han Chen: Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, College of Physical Science and Technology, Xiamen University
Feiya Xu: Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, College of Physical Science and Technology, Xiamen University
Tongchang Zheng: Department of Physics, School of Science, Jimei University
Fuchun Xu: Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, College of Physical Science and Technology, Xiamen University
Xiaohong Chen: Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, College of Physical Science and Technology, Xiamen University
Duanjun Cai: Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, College of Physical Science and Technology, Xiamen University
Junyong Kang: Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, College of Physical Science and Technology, Xiamen University

DOI: https://doi.org/10.1038/s41467-022-30762-1
Journal volume & issue: Vol. 13, no. 1
pp. 1 – 10

Abstract

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Asymmetric n/p conductivity is a fundamental difficulty in wide bandgap semiconductors. Here the authors demonstrate a concept of orbital level engineering through sacrificial impurity coupling to achieve n-type conductivity (ne ~1016 cm-3) in hexagonal BN.

Published in Nature Communications

ISSN: 2041-1723 (Online)
Publisher: Nature Portfolio
Country of publisher: United Kingdom
LCC subjects: Science
Website: https://www.nature.com/ncomms/

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