Origin of lattice compression of FeSe1-xTex thin films on CaF2 substrates

I. Tsukada; A. Ichinose; F. Nabeshima; Y. Imai; A. Maeda

doi:10.1063/1.4963646

AIP Advances (Sep 2016)

Origin of lattice compression of FeSe1-xTex thin films on CaF2 substrates

I. Tsukada,
A. Ichinose,
F. Nabeshima,
Y. Imai,
A. Maeda

Affiliations

I. Tsukada: Central Research Institute of Electric Power Industry, 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196, Japan
A. Ichinose: Central Research Institute of Electric Power Industry, 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196, Japan
F. Nabeshima: Department of Basic Science, The University of Tokyo, 3-8-1 Komaba, Meguro-ku, Tokyo 153-8902, Japan
Y. Imai: Department of Basic Science, The University of Tokyo, 3-8-1 Komaba, Meguro-ku, Tokyo 153-8902, Japan
A. Maeda: Department of Basic Science, The University of Tokyo, 3-8-1 Komaba, Meguro-ku, Tokyo 153-8902, Japan

DOI: https://doi.org/10.1063/1.4963646
Journal volume & issue: Vol. 6, no. 9
pp. 095314 – 095314-7

Abstract

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Microstructure of FeSe1-xTex thin films near the interface to CaF2 is investigated by means of transmission electron microscopy (TEM) and energy-dispersive X-ray analysis (EDX). TEM observation at the initial crystal-growth stage reveals that marked lattice compression occurs along the in-plane direction in the films with Se-rich composition, while the a-axis length of FeTe remains as its original value of bulk crystal. Subsequent EDX analysis demonstrates substantial diffusion of Se into the CaF2 substrate. Such diffusion is not prominent for Te. Thus, the formation of Se-deficient layer at the initial growth stage on CaF2 is concluded to be the main reason of the lattice compression in FeSe1-xTex thin films.

Published in AIP Advances

ISSN: 2158-3226 (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Science: Physics
Website: http://aipadvances.aip.org/

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