Enhanced Photodetection Range from Visible to Shortwave Infrared Light by ReSe<sub>2</sub>/MoTe<sub>2</sub> van der Waals Heterostructure
Zhitao Lin,
Wenbiao Zhu,
Yonghong Zeng,
Yiqing Shu,
Haiguo Hu,
Weicheng Chen,
Jianqing Li
Affiliations
Zhitao Lin
School of Computer Science and Engineering, Macau University of Science and Technology, Avenida Wai Long, Taipa, Macao 999078, China
Wenbiao Zhu
Institute of Microscale Optoelectronics, Collaborative Innovation Centre for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen 518060, China
Yonghong Zeng
Institute of Microscale Optoelectronics, Collaborative Innovation Centre for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen 518060, China
Yiqing Shu
School of Computer Science and Engineering, Macau University of Science and Technology, Avenida Wai Long, Taipa, Macao 999078, China
Haiguo Hu
Institute of Microscale Optoelectronics, Collaborative Innovation Centre for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen 518060, China
Weicheng Chen
Guangdong-HongKong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, Foshan University, Foshan 528225, China
Jianqing Li
School of Computer Science and Engineering, Macau University of Science and Technology, Avenida Wai Long, Taipa, Macao 999078, China
Type II vertical heterojunction is a good solution for long-wavelength light detection. Here, we report a rhenium selenide/molybdenum telluride (n-ReSe2/p-MoTe2) photodetector for high-performance photodetection in the broadband spectral range of 405–2000 nm. Due to the low Schottky barrier contact of the ReSe2/MoTe2 heterojunction, the rectification ratio (RR) of ~102 at ±5 V is realized. Besides, the photodetector can obtain maximum responsivity (R = 1.05 A/W) and specific detectivity (D* = 6.66 × 1011 Jones) under the illumination of 655 nm incident light. When the incident wavelength is 1550–2000 nm, a photocurrent is generated due to the interlayer transition of carriers. This compact system can provide an opportunity to realize broadband infrared photodetection.
