Effect of Schottky barrier height on quantitative analysis of deep-levels in n-type GaN by deep-level transient spectroscopy

Abstract

Deep-level transient spectroscopy (DLTS) using Schottky barrier diodes (SBDs) is widely used for quantitative analysis of deep levels. This study focuses on the dependence of Schottky barrier height on apparent time constants and concentrations of electron traps in n-type GaN. DLTS using SBDs with various barrier heights was carried out. Experimental data show that large reverse leakage currents due to low barrier heights resulted in underestimation of time constants and concentrations. Theoretical calculations considering the impact of leakage currents reproduced experimental results well. Based on the calculations, we suggest a minimum required barrier height where accurate time constants and concentrations can be evaluated.