Change of Nano Material Electrical Characteristics for Medical System Applications [Corrigendum]

Abstract

Chen P, Zhang X, Jiang K, et al. Int J Nanomedicine. 2019;14:10119–10122. Page 10120, left column, Materials And Methods section, line 2, the text “30 ~ 50 nm thick” should read “30 ~ 60 nm thick”. Page 10120, Figure 2, the Y axis “IDS(nA)” should read “IDS(pA)”. Figure 3 on page 10120, the authors have advised the figure was created using the wrong sample and therefore, is incorrect. The correct Figure 3 is shown below. Figure 3 The C-V curve of the present n-type TFTs could be easily changed to that of p-type TFTs. The authors apologize for these errors and advise they do not affect the results of the paper.

Keywords

• electrical properties
• n-type semiconductor
• p-type
• xps
• current-voltage (i-v)
• capacitance-voltage (c-v)
• sensors