Current-Induced Magnetic Switching in an L10 FePt Single Layer with Large Perpendicular Anisotropy Through Spin–Orbit Torque
Kaifeng Dong,
Chao Sun,
Laizhe Zhu,
Yiyi Jiao,
Ying Tao,
Xin Hu,
Ruofan Li,
Shuai Zhang,
Zhe Guo,
Shijiang Luo,
Xiaofei Yang,
Shaoping Li,
Long You
Affiliations
Kaifeng Dong
School of Automation, China University of Geosciences, Wuhan 430074, China; Hubei Key Laboratory of Advanced Control and Intelligent Automation for Complex Systems, China University of Geosciences, Wuhan 430074, China
Chao Sun
School of Automation, China University of Geosciences, Wuhan 430074, China; Hubei Key Laboratory of Advanced Control and Intelligent Automation for Complex Systems, China University of Geosciences, Wuhan 430074, China
Laizhe Zhu
School of Automation, China University of Geosciences, Wuhan 430074, China; Hubei Key Laboratory of Advanced Control and Intelligent Automation for Complex Systems, China University of Geosciences, Wuhan 430074, China
Yiyi Jiao
School of Automation, China University of Geosciences, Wuhan 430074, China; Hubei Key Laboratory of Advanced Control and Intelligent Automation for Complex Systems, China University of Geosciences, Wuhan 430074, China
Ying Tao
School of Automation, China University of Geosciences, Wuhan 430074, China; Hubei Key Laboratory of Advanced Control and Intelligent Automation for Complex Systems, China University of Geosciences, Wuhan 430074, China
Xin Hu
School of Automation, China University of Geosciences, Wuhan 430074, China; Hubei Key Laboratory of Advanced Control and Intelligent Automation for Complex Systems, China University of Geosciences, Wuhan 430074, China
Ruofan Li
School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
Shuai Zhang
School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
Zhe Guo
School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
Shijiang Luo
School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
Xiaofei Yang
School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
Shaoping Li
China Resources Microelectronics Limited, Shanghai 200072, China
Long You
School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China; Shenzhen Huazhong University of Science and Technology Research Institute, Shenzhen 518000, China; Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, China; Corresponding author.
In this study, current-induced partial magnetization-based switching was realized through the spin–orbit torque (SOT) in single-layer L10 FePt with a perpendicular anisotropy (Ku⊥) of 1.19 × 107 erg·cm−3 (1 erg·cm−3 = 0.1 J·m−3), and its corresponding SOT efficiency (βDL) was 8 × 10−6 Oe·(A·cm−2)−1 (1 Oe = 79.57747 A·m−1), which is several times higher than that of the traditional Ta/CoFeB/MgO structure reported in past work. The SOT in the FePt films originated from the structural inversion asymmetry in the FePt films since the dislocations and defects were inhomogeneously distributed within the samples. Furthermore, the FePt grown on MgO with a granular structure had a larger effective SOT field and efficiency than that grown on SrTiO3 (STO) with a continuous structure. The SOT efficiency was found to be considerably dependent on not only the sputtering temperature-induced chemical ordering but also the lattice mismatch-induced evolution of the microstructure. Our findings can provide a useful means of efficiently electrically controlling a magnetic bit that is highly thermally stable via SOT.
