Effect of Annealing and of Effect of Annealing and of Cooling Rates on n-GaAs Electrode Photoelectrochemical Characteristics

Hikmat S. Hilal; Subhi K. Salih; Iyad A. Sa'adeddin; Guy Campet

doi:10.1080/0882751031000116115

Active and Passive Electronic Components (Jan 2004)

Effect of Annealing and of Effect of Annealing and of Cooling Rates on n-GaAs Electrode Photoelectrochemical Characteristics

Hikmat S. Hilal,
Subhi K. Salih,
Iyad A. Sa'adeddin,
Guy Campet

Affiliations

Hikmat S. Hilal: College of Sciences, An-Najah N. University, P.O. Box 7, Nablus, West Bank, Palestinian Authority
Subhi K. Salih: College of Sciences, An-Najah N. University, P.O. Box 7, Nablus, West Bank, Palestinian Authority
Iyad A. Sa'adeddin: College of Sciences, An-Najah N. University, P.O. Box 7, Nablus, West Bank, Palestinian Authority
Guy Campet: Institut de Chimie de la Matiere Condensee de Bordeaux, Bordeaux University, Av. Dr. A. Schweitzer, Pessac 33608, France

DOI: https://doi.org/10.1080/0882751031000116115
Journal volume & issue: Vol. 27, no. 2
pp. 69 – 80

Abstract

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The effect of annealing of the n-GaAs semiconductor on its characteristics in photoelectrochemical (PEC) systems has been investigated. The photocurrent densities vs potential plots were improved by annealing. Cell efficiency and short-circuit current densities were enhanced for the annealed n-GaAs.

Published in Active and Passive Electronic Components

ISSN: 0882-7516 (Print); 1563-5031 (Online)
Publisher: Wiley
Country of publisher: United Kingdom
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering
Website: https://onlinelibrary.wiley.com/journal/5080

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