Observation of negative capacitance in antiferroelectric PbZrO3 Films

Leilei Qiao; Cheng Song; Yiming Sun; Muhammad Umer Fayaz; Tianqi Lu; Siqi Yin; Chong Chen; Huiping Xu; Tian-Ling Ren; Feng Pan

doi:10.1038/s41467-021-24530-w

Nature Communications (Jul 2021)

Observation of negative capacitance in antiferroelectric PbZrO3 Films

Leilei Qiao,
Cheng Song,
Yiming Sun,
Muhammad Umer Fayaz,
Tianqi Lu,
Siqi Yin,
Chong Chen,
Huiping Xu,
Tian-Ling Ren,
Feng Pan

Affiliations

Leilei Qiao: Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Beijing Innovation Center for Future Chip (ICFC), Tsinghua University
Cheng Song: Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Beijing Innovation Center for Future Chip (ICFC), Tsinghua University
Yiming Sun: Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Beijing Innovation Center for Future Chip (ICFC), Tsinghua University
Muhammad Umer Fayaz: Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Beijing Innovation Center for Future Chip (ICFC), Tsinghua University
Tianqi Lu: Institute of Microelectronics & Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University
Siqi Yin: Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Beijing Innovation Center for Future Chip (ICFC), Tsinghua University
Chong Chen: Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Beijing Innovation Center for Future Chip (ICFC), Tsinghua University
Huiping Xu: Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Beijing Innovation Center for Future Chip (ICFC), Tsinghua University
Tian-Ling Ren: Institute of Microelectronics & Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University
Feng Pan: Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Beijing Innovation Center for Future Chip (ICFC), Tsinghua University

DOI: https://doi.org/10.1038/s41467-021-24530-w
Journal volume & issue: Vol. 12, no. 1
pp. 1 – 9

Abstract

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The observation of negative capacitance effect is focused on the ferroelectrics, while the antiferroelectrics based on Landau switches may have negative capacitance effect. Here, the authors report the static and transient negative capacitance effect in antiferroelectric PbZrO3 and reveal its origin.

Published in Nature Communications

ISSN: 2041-1723 (Online)
Publisher: Nature Portfolio
Country of publisher: United Kingdom
LCC subjects: Science
Website: https://www.nature.com/ncomms/

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