Fully depleted vdW heterojunction based high performance photovoltaic photodetector

Yonghong Zeng; Fanxu Meng; Sidi Fan; Pengfei Wang; Cuiyun Kou; Mingyi Sun; Haiguo Hu; Rui Cao; Swelm Wageh; Omar A. Al-Hartomy; Abul Kalam; Bowen Du; Wenchao Ding; Songrui Wei; Zhinan Guo; Qiuliang Wang; Han Zhang

Journal of Materiomics (Nov 2023)

Fully depleted vdW heterojunction based high performance photovoltaic photodetector

Yonghong Zeng,
Fanxu Meng,
Sidi Fan,
Pengfei Wang,
Cuiyun Kou,
Mingyi Sun,
Haiguo Hu,
Rui Cao,
Swelm Wageh,
Omar A. Al-Hartomy,
Abul Kalam,
Bowen Du,
Wenchao Ding,
Songrui Wei,
Zhinan Guo,
Qiuliang Wang,
Han Zhang

Affiliations

Yonghong Zeng: College of Physics and Optoelectronic Engineering, Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Interdisciplinary Center of High Magnetic Field Physics of Shenzhen University, Shenzhen University, Shenzhen, 518060, China
Fanxu Meng: College of Physics and Optoelectronic Engineering, Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Interdisciplinary Center of High Magnetic Field Physics of Shenzhen University, Shenzhen University, Shenzhen, 518060, China; Center of Characterization and Analysis, Jilin Institute of Chemical Technology, Jilin, 132022, China
Sidi Fan: College of Physics and Optoelectronic Engineering, Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Interdisciplinary Center of High Magnetic Field Physics of Shenzhen University, Shenzhen University, Shenzhen, 518060, China
Pengfei Wang: College of Physics and Optoelectronic Engineering, Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Interdisciplinary Center of High Magnetic Field Physics of Shenzhen University, Shenzhen University, Shenzhen, 518060, China
Cuiyun Kou: Guangzhou Key Laboratory of Sensing Materials and Devices, Center for Advanced Analytical Science, School of Chemistry and Chemical Engineering, Guangzhou University, Guangzhou, 510006, China
Mingyi Sun: College of Physics and Optoelectronic Engineering, Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Interdisciplinary Center of High Magnetic Field Physics of Shenzhen University, Shenzhen University, Shenzhen, 518060, China
Haiguo Hu: College of Physics and Optoelectronic Engineering, Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Interdisciplinary Center of High Magnetic Field Physics of Shenzhen University, Shenzhen University, Shenzhen, 518060, China; Guangzhou Key Laboratory of Sensing Materials and Devices, Center for Advanced Analytical Science, School of Chemistry and Chemical Engineering, Guangzhou University, Guangzhou, 510006, China
Rui Cao: College of Physics and Optoelectronic Engineering, Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Interdisciplinary Center of High Magnetic Field Physics of Shenzhen University, Shenzhen University, Shenzhen, 518060, China
Swelm Wageh: Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah, 21589, Saudi Arabia
Omar A. Al-Hartomy: Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah, 21589, Saudi Arabia
Abul Kalam: Research Center for Advanced Materials Science (RCAMS), Department of Chemistry, College of Science, King Khalid University, P.O. Box 9004, Abha, 61413, Saudi Arabia
Bowen Du: College of Physics and Optoelectronic Engineering, Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Interdisciplinary Center of High Magnetic Field Physics of Shenzhen University, Shenzhen University, Shenzhen, 518060, China
Wenchao Ding: Foshan Electrical and Lighting Co., LTD, 64 North Fenjiang Road, Foshan, China
Songrui Wei: College of Physics and Optoelectronic Engineering, Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Interdisciplinary Center of High Magnetic Field Physics of Shenzhen University, Shenzhen University, Shenzhen, 518060, China
Zhinan Guo: Guangzhou Key Laboratory of Sensing Materials and Devices, Center for Advanced Analytical Science, School of Chemistry and Chemical Engineering, Guangzhou University, Guangzhou, 510006, China; Corresponding author.
Qiuliang Wang: College of Physics and Optoelectronic Engineering, Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Interdisciplinary Center of High Magnetic Field Physics of Shenzhen University, Shenzhen University, Shenzhen, 518060, China; Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing, 100190, China
Han Zhang: College of Physics and Optoelectronic Engineering, Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Interdisciplinary Center of High Magnetic Field Physics of Shenzhen University, Shenzhen University, Shenzhen, 518060, China; Corresponding author.

Journal volume & issue: Vol. 9, no. 6
pp. 1039 – 1047

Abstract

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Van der Waals (vdW) heterojunctions, with their unique electronic and optoelectronic properties, have become promising candidates for photodetector applications. Amplifying the contribution of the depletion region in vdW heterojunction, which would enhance both of the collection efficiency and speed of the photogenerated carriers, presents an effective strategy for achieving high performance vdW heterojunction photodetectors. Herein, a fully depleted vdW heterojunction photodetector is built on two-dimensional (2D) semiconductor materials (GaTe and InSe) layered on a pattered bottom electrode in vertical structure, in which the generation and motion of carriers are exclusively achieved in the depletion region. Attributed to the intrinsic built-in electric field, the elimination of series resistance and the depletion region confinement of carriers, the as-fabricated photodetector exhibits prominent photovoltaic properties with a high open-circuit voltage of 0.465 V, as well as photoresponse characteristics with outstanding responsivity, detectivity and photoresponse speed of 63.7 A/W, 3.88 × 1013 Jones, and 32.7 μs respectively. The overall performance of this fully depleted GaTe/InSe vdW heterojunctions photodetectors are ranking high among the top level of 2D materials based photodetectors. It indicates the device architecture can provide new opportunities for the fabrication of high-performance photodetectors.

Published in Journal of Materiomics

ISSN: 2352-8478 (Print); 2352-8486 (Online)
Publisher: Elsevier
Country of publisher: Netherlands
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
Website: https://www.sciencedirect.com/journal/journal-of-materiomics

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