AIP Advances (Feb 2019)

Crystal structure and optical performance in bulk γ-InSe single crystals

  • Min Wu,
  • Qiyun Xie,
  • Yizhang Wu,
  • Jiajin Zheng,
  • Wei Wang,
  • Liang He,
  • Xiaoshan Wu,
  • Bin Lv

DOI
https://doi.org/10.1063/1.5086492
Journal volume & issue
Vol. 9, no. 2
pp. 025013 – 025013-6

Abstract

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High purity γ-phase InSe single crystals have been synthesized and characterized by XRD, SEM, EDS and TEM. Detailed temperature dependent Raman and photoluminescence spectroscopy suggests a small blue-shift as temperature decreases. The corresponding blue shift in Raman and photoluminescence can be explained in terms of self-energy and the lattice parameter change induced variation of band gap, respectively. Moreover, bulk InSe exhibits photoresponsivity in a wide spectrum from 400 to 990 nm. The maximum photoresponsivity reaches up to 8.82 mA/W under the wavelength of 800 nm, which is consistent with high absorption at the wavelength.