Strained Silicon Single Nanowire Gate-All-Around TFETs with Optimized Tunneling Junctions

Abstract

In this work, we demonstrate a strained Si single nanowire tunnel field effect transistor (TFET) with gate-all-around (GAA) structure yielding Ion-current of 15 μA/μm at the supply voltage of Vdd = 0.5V with linear onset at low drain voltages. The subthreshold swing (SS) at room temperature shows an average of 76 mV/dec over 4 orders of drain current Id from 5 × 10−6 to 5 × 10−2 µA/µm Optimized devices also show excellent current saturation, an important feature for analog performance.

Keywords

• tunnel field effect transistor (TFET)
• band-to-band tunneling (BTBT)
• trap-assisted tunneling (TAT)
• gate-all-around (GAA) nanowires (NWs)