High Performance Wide Angle DBR Design for Optoelectronic Devices

Ting Zhi; Tao Tao; Bin Liu; Yu Yan; Zili Xie; Hong Zhao; Dunjun Chen

doi:10.1109/JPHOT.2021.3050761

IEEE Photonics Journal (Jan 2021)

High Performance Wide Angle DBR Design for Optoelectronic Devices

Ting Zhi,
Tao Tao,
Bin Liu,
Yu Yan,
Zili Xie,
Hong Zhao,
Dunjun Chen

Affiliations

Ting Zhi: College of Electronic and Optical Engineering and College of Microelectronics, Nanjing University of Posts and Telecommunications, Nanjing, China
Tao Tao: ORCiD; Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, China
Bin Liu: ORCiD; Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, China
Yu Yan: Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, China
Zili Xie: Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, China
Hong Zhao: Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, China
Dunjun Chen: Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, China

DOI: https://doi.org/10.1109/JPHOT.2021.3050761
Journal volume & issue: Vol. 13, no. 1
pp. 1 – 6

Abstract

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To improve the performance of optoelectronic devices, a high performance wide angle SiO2/Ti3O5 Distributed Bragg Reflector (DBR) mirror was designed and fabricated on double polished sapphire substrate. 17-pairs gradually varied DBR structure was applied in order to acquire a broad stopband reflectivity over 95% from 400 nm to 800 nm, covering the whole visible light region. The DBR mirrors deposited at the backside of optoelectronics devices are also demonstrated to remain a high reflectivity at wide incident angles, which improves the emission efficiency of LEDs and light absorption efficiency of InGaN/GaN photoelectrochemical cell (PEC).

Published in IEEE Photonics Journal

ISSN: 1943-0655 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Engineering (General). Civil engineering (General): Applied optics. Photonics; Science: Physics: Optics. Light
Website: http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=4563994

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