Electro-physical properties of Ge-doped Cd1-xMnxTe (x <0,1) crystals

Abstract

Ge-doped Cd1-xMnxTe (x = 0.02, 0.04, 0.08) crystals were grown by the Bridgman method. Carried out electrical measurements in the temperature range 280-420 K have found that the crystals’ hole conductivity is controlled by the deep compensated acceptors, whose ionization energy (εA) was increased with the content Mn (x) according to the relation εA = 0.6 (1 + 2х) eV. At 300 K: ρ = (108-109) (Ohm´cm), RH = (5×109-5×1010) cm3/C; mobility of current carriers ~ 50 cm2/(V´s).

Keywords

• cd1-xmnxte
• тверді розчини
• електричні властивості
• ефект холла
• германій