AIP Advances (Jan 2016)

Temperature dependence of Raman scattering in β-(AlGa)2O3 thin films

  • Xu Wang,
  • Zhengwei Chen,
  • Fabi Zhang,
  • Katsuhiko Saito,
  • Tooru Tanaka,
  • Mitsuhiro Nishio,
  • Qixin Guo

DOI
https://doi.org/10.1063/1.4940763
Journal volume & issue
Vol. 6, no. 1
pp. 015111 – 015111-10

Abstract

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We report a detailed investigation on temperature-dependent Raman scattering of β-(AlGa)2O3 thin films with different Al content (0-0.72) under the temperature range of 77-300 K. The temperature-dependent Raman shifts and linewidths of the phonon modes were obtained by employing Lorentz fitting. The linewidths broadening of phonon modes with the temperature can be well explained by a model involving the effects of thermal expansion, lattice-mismatch-induced strain, and decay of optical phonon into two and three phonons. It is clearly demonstrated dependence of the linewidths and decay process on the Al content in β-(AlGa)2O3 thin films, which can provide an experimental basis for realization of (AlGa)2O3-based optoelectronic device applications.