Pressure-assisted fabrication of perovskite light emitting devices
S. A. Adeniji,
J. Cromwell,
D. O. Oyewole,
O. V. Oyelade,
R. K. Koech,
D. M. Sanni,
O. K. Oyewole,
B. Babatope,
W. O. Soboyejo
Affiliations
S. A. Adeniji
Department of Theoretical and Applied Physics, African University of Science and Technology, Km 10 Airport Road, Galadimawa, P.M.B. 681, Garki-Abuja, Federal Capital Territory, Nigeria
J. Cromwell
Department of Mechanical Engineering, Worcester Polytechnic Institute, 100 Institute Road, Worcester, Massachusetts 01609, USA
D. O. Oyewole
Department of Mechanical Engineering, Worcester Polytechnic Institute, 100 Institute Road, Worcester, Massachusetts 01609, USA
O. V. Oyelade
Department of Theoretical and Applied Physics, African University of Science and Technology, Km 10 Airport Road, Galadimawa, P.M.B. 681, Garki-Abuja, Federal Capital Territory, Nigeria
R. K. Koech
Department of Mechanical Engineering, Worcester Polytechnic Institute, 100 Institute Road, Worcester, Massachusetts 01609, USA
D. M. Sanni
Department of Theoretical and Applied Physics, African University of Science and Technology, Km 10 Airport Road, Galadimawa, P.M.B. 681, Garki-Abuja, Federal Capital Territory, Nigeria
O. K. Oyewole
Department of Mechanical Engineering, Worcester Polytechnic Institute, 100 Institute Road, Worcester, Massachusetts 01609, USA
B. Babatope
Department of Physics, Obafemi Awolowo University, P.M.B. 13, Ile-Ife, Osun State, Nigeria
W. O. Soboyejo
Department of Mechanical Engineering, Worcester Polytechnic Institute, 100 Institute Road, Worcester, Massachusetts 01609, USA
This paper presents the results of pressure-effects on performance characteristics of near-infra-red perovskite light emitting diodes (PeLEDs) using a combination of experimental and analytical/computational approaches. First, pressure-effects are studied using models that consider the deformation and contacts that occur around interfacial impurities and interlayer surface roughness in PeLEDs. The predictions from the model show that the sizes of the interfacial defects decrease with increasing applied pressure. The current–voltage characteristics of the fabricated devices are also presented. These show that the PeLEDs have reduced turn-on voltages (from 2.5 V to 1.5 V) with the application of pressure. The associated pressure-induced reductions in the defect density and the bandgaps of the perovskite layer are then used to explain the improved performance characteristics of the PeLED devices.
