Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki (Jun 2019)

Photocurrent in the structures of silicon / strontium titanate / nickel

  • P. A. Kholov,
  • N. V. Gaponenko,
  • D. A. Golosov,
  • S. M. Zavadski,
  • V. A. Ivanov,
  • V. V. Kolos,
  • B. S. Kolosnitsin

Journal volume & issue
Vol. 0, no. 1
pp. 19 – 24

Abstract

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The SrTiO3 (strontium titanate xerogel) films were fabricated on the substrates of monocrystalline silicon using the sol-gel method at the annealing temperature 750 °С. The upper nickel electrodes were fabricated using the magnetron sputtering, and the volt-amperic characteristics of the obtained structures were measured. Photocurrent was observed from the structure silicon/strontium titanate/nickel under illumination with the halogen lamp, as well as switching from low resistance state to high resistance state under and without illumination.

Keywords