Comparative study of Au and Ni/Au gated AlGaN/GaN high electron mobility transistors

Abstract

This paper presents the electrical comparison of Au and Ni/Au gated HEMT devices and diodes. Au Schottky diodes on an AlGaN/GaN heterostructure exhibit better electrical performance in comparison to conventional Ni/Au diodes with an improved Schottky barrier height (SBH) and lower reverse leakage current. The SBH extracted from I-V for Au and Ni/Au is 1.29 eV and 0.74 eV, respectively. Au Schottky contacts on GaN have a better ideality factor of 1.55 than Ni, which is 1.61. Capacitance-voltage measurement revealed a positive shift in threshold voltage in the case of Au diodes with a reduced capacitance value with respect to Ni/Au diodes. This decrease in threshold and capacitance indicates a decrease in the 2DEG carrier concentration. The decrease in the 2DEG carrier concentration is consistent with three terminal device measurements. Despite a small decrease in drain current (8%), the Au gated HEMT devices have shown an improved subthreshold slope (13%) and nearly 4 order improvement in the ION/IOFF ratio than Ni/Au gated HEMTs. Pulse IV characterization has indicated that gate lag and drain lag have no major changes with respect to gate metal, whereas current collapse increases for high work function metals.