The Effect of a Vacuum Environment on the Electrical Properties of a MoS<sub>2</sub> Back-Gate Field Effect Transistor
Jichao Li,
Songang Peng,
Zhi Jin,
He Tian,
Ting Wang,
Xueyang Peng
Affiliations
Jichao Li
High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
Songang Peng
High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
Zhi Jin
High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
He Tian
School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100049, China
Ting Wang
High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
Xueyang Peng
High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
Adsorption of gas molecules on the surface of two-dimensional (2D) molybdenum disulfide (MoS2) can significantly affect its carrier transport properties. In this letter, we investigated the effect of a vacuum environment on the electrical properties of a back-gate MoS2 FET. Benefiting from the reduced scattering centers caused by the adsorbed oxygen and water molecules in a vacuum, the current Ion/Ioff ratio of back-gate MoS2 field effect transistor increased from 1.4 × 106 to 1.8 × 107. In addition, the values of field effect carrier mobility were increased by more than four times, from 1 cm2/Vs to 4.2 cm2/Vs. Furthermore, the values of subthreshold swing could be decreased by 30% compared with the sample in ambient air. We demonstrate that the vacuum process can effectively remove absorbates and improve device performances.
