Progress in Research on Luminescence Properties and Modification of SiC

Abstract

As a typical material of the third-generation semiconductor with wide band gap, high thermal conductivity and high critical breakdown electric field, silicon carbide(SiC) has a huge potential in the applications of photoelectric devices that can work in some extreme conditions, such as in a high temperature or intense radiation environment. Here, the research status of luminescence properties and applications of SiC was summarized. The preparation methods and characteristic luminescence of monocrystal, nanocrystalline and thin film of SiC were presented. Besides, the progress and prospect of SiC luminescence control was also discussed in this paper. Utilizing the emerging technologies, we will be able to modify SiC's properties like luminescence spectrum and efficiency.

Keywords

• SiC
• wide-band semiconductor
• luminescence
• luminescence modification