THERMOELECTRIC PROCESSES IN AN EFFICIENT LIGHT-EMITTING TRANSISTOR

Abstract

Objectives Development of energy-efficient light-emitting bipolar semiconductor structures.Method A method for transforming thermoelectric heat in bipolar semiconductor structures into optical-range electromagnetic radiation, which preserves the cooling effect on thermoelectric transitions, is proposed. Instead of transferring the information impulse electrically from the baseemitter light-emitting transition, the information is transferred directly to the light-absorbing basecollector transition by photons or following multiple re-reflections from mirror metal electrodes.Results Unlike conventional optocouplers discretely separated in space, the novel optocouplers described in the article are integrated into a single electronic component using the principle of LED radiation. As a result, light-emitting bipolar semiconductor structures will result in the creation of more powerful, faster and better integrated devices.Conclusion Light-emitting bipolar semiconductor structures will not only increase the reliability of electronic components across a wide range of performance characteristics, but also increase energy efficiency through the use of optical radiation recovery. The future development of light-efficient transistors improves integration and increases processor performance, at the same time as reducing the power consumption of the cooling system and the power supply of the device itself.

Keywords

• light-emitting bipolar semiconductor structures
• optical radiation
• recovery
• energy-efficiency
• mirror electrode