pMOSFETs Featuring ALD W Filling Metal Using SiH4 and B2H6 Precursors in 22 nm Node CMOS Technology

Abstract

Abstract In this paper, pMOSFETs featuring atomic layer deposition (ALD) tungsten (W) using SiH4 and B2H6 precursors in 22 nm node CMOS technology were investigated. It is found that, in terms of threshold voltage, driving capability, carrier mobility, and the control of short-channel effects, the performance of devices featuring ALD W using SiH4 is superior to that of devices featuring ALD W using B2H6. This disparity in device performance results from different metal gate-induced strain from ALD W using SiH4 and B2H6 precursors, i.e. tensile stresses for SiH4 (~2.4 GPa) and for B2H6 (~0.9 GPa).

Keywords

• ALD W
• High-k and metal gate (HKMG)
• Nano-beam diffraction (NBD)
• Threshold voltage (V t )
• Mobility