Three-dimensional crossbar arrays of self-rectifying Si/SiO2/Si memristors

Can Li; Lili Han; Hao Jiang; Moon-Hyung Jang; Peng Lin; Qing Wu; Mark Barnell; J. Joshua Yang; Huolin L. Xin; Qiangfei Xia

doi:10.1038/ncomms15666

Nature Communications (Jun 2017)

Three-dimensional crossbar arrays of self-rectifying Si/SiO2/Si memristors

Can Li,
Lili Han,
Hao Jiang,
Moon-Hyung Jang,
Peng Lin,
Qing Wu,
Mark Barnell,
J. Joshua Yang,
Huolin L. Xin,
Qiangfei Xia

Affiliations

Can Li: Department of Electrical and Computer Engineering, University of Massachusetts
Lili Han: Department of Electrical and Computer Engineering, University of Massachusetts
Hao Jiang: Department of Electrical and Computer Engineering, University of Massachusetts
Moon-Hyung Jang: Department of Electrical and Computer Engineering, University of Massachusetts
Peng Lin: Department of Electrical and Computer Engineering, University of Massachusetts
Qing Wu: Air Force Research Laboratory, Information Directorate
Mark Barnell: Air Force Research Laboratory, Information Directorate
J. Joshua Yang: Department of Electrical and Computer Engineering, University of Massachusetts
Huolin L. Xin: Center for Functional Nanomaterials, Brookhaven National Laboratory
Qiangfei Xia: Department of Electrical and Computer Engineering, University of Massachusetts

DOI: https://doi.org/10.1038/ncomms15666
Journal volume & issue: Vol. 8, no. 1
pp. 1 – 9

Abstract

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Memristors are key structural units of complex memory and computing systems, yet most currently available memristors are based on materials that are not compatible with silicon technology. Here, the authors demonstrate a CMOS-compatible, self-rectifying memristor and arrays entirely based on p-Si/SiO2/n-Si.

Published in Nature Communications

ISSN: 2041-1723 (Online)
Publisher: Nature Portfolio
Country of publisher: United Kingdom
LCC subjects: Science
Website: https://www.nature.com/ncomms/

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