The Lattice Distortion, Defect Evolution and Electrochemical Performance Improvement in Zn-VO<sub>2</sub>(B) Nanorods
Dewei Liu,
Qijie Zhang,
Xiaohong Chen,
Penggang Zhu,
Fufeng Yan,
Xuzhe Wang,
Haiyang Dai,
Jing Chen,
Gaoshang Gong,
Cui Shang,
Luogang Xie,
Xuezhen Zhai
Affiliations
Dewei Liu
Henan Key Laboratory of Magnetoelectronic Information Functional Materials, School of Physics and Electronic Engineering, Zhengzhou University of Light Industry, 136 Kexue Road, Zhengzhou 450002, China
Qijie Zhang
Henan Key Laboratory of Magnetoelectronic Information Functional Materials, School of Physics and Electronic Engineering, Zhengzhou University of Light Industry, 136 Kexue Road, Zhengzhou 450002, China
Xiaohong Chen
Henan Key Laboratory of Magnetoelectronic Information Functional Materials, School of Physics and Electronic Engineering, Zhengzhou University of Light Industry, 136 Kexue Road, Zhengzhou 450002, China
Penggang Zhu
Henan Key Laboratory of Magnetoelectronic Information Functional Materials, School of Physics and Electronic Engineering, Zhengzhou University of Light Industry, 136 Kexue Road, Zhengzhou 450002, China
Fufeng Yan
Henan Key Laboratory of Magnetoelectronic Information Functional Materials, School of Physics and Electronic Engineering, Zhengzhou University of Light Industry, 136 Kexue Road, Zhengzhou 450002, China
Xuzhe Wang
Henan Key Laboratory of Magnetoelectronic Information Functional Materials, School of Physics and Electronic Engineering, Zhengzhou University of Light Industry, 136 Kexue Road, Zhengzhou 450002, China
Haiyang Dai
Henan Key Laboratory of Magnetoelectronic Information Functional Materials, School of Physics and Electronic Engineering, Zhengzhou University of Light Industry, 136 Kexue Road, Zhengzhou 450002, China
Jing Chen
Henan Key Laboratory of Magnetoelectronic Information Functional Materials, School of Physics and Electronic Engineering, Zhengzhou University of Light Industry, 136 Kexue Road, Zhengzhou 450002, China
Gaoshang Gong
Henan Key Laboratory of Magnetoelectronic Information Functional Materials, School of Physics and Electronic Engineering, Zhengzhou University of Light Industry, 136 Kexue Road, Zhengzhou 450002, China
Cui Shang
Henan Key Laboratory of Magnetoelectronic Information Functional Materials, School of Physics and Electronic Engineering, Zhengzhou University of Light Industry, 136 Kexue Road, Zhengzhou 450002, China
Luogang Xie
Henan Key Laboratory of Magnetoelectronic Information Functional Materials, School of Physics and Electronic Engineering, Zhengzhou University of Light Industry, 136 Kexue Road, Zhengzhou 450002, China
Xuezhen Zhai
Henan Key Laboratory of Magnetoelectronic Information Functional Materials, School of Physics and Electronic Engineering, Zhengzhou University of Light Industry, 136 Kexue Road, Zhengzhou 450002, China
Cathode materials of energy storage batteries have attracted extensive attention because of the importance in deciding the rate performance and long cycle property of batteries. Herein, we report a simple and environmentally friendly solvothermal method to prepare Zn-doped VO2(B) cathode materials. The introduction of zinc ions can effectively regulate the lattice structure, surface morphology and internal defect state of Zn-VO2(B) nano materials. The sample with Zn content x = 1.5% has smaller cell volume and grain size, and higher concentration of vacancy defects. These microstructures ensure the structural stability during ion embedding process and, thus, this sample shows excellent electrochemical performances. The capacitance retention rate still maintains 88% after 1000 cycles at the current density of 0.1 A·g−1. The enhanced performances of Zn-doped VO2(B) samples may lay a foundation for the improvement of electrochemical performances of VO2(B) cathode materials for energy storage batteries in the future.
