Multi-Channel Step FinFET With Spacer Engineering

Abstract

Multi-channel FinFET ( $\text{M}_{\textbf {ch}}$ -FinFET) is an emerging device having promising use due to its excellent driving capability. In this paper, we have investigated the significance of multiple channels of FinFET configuration. We have examined the performance of the multi-channel-based step FinFET ( $\text{M}_{\textbf {ch}}$ - step FinFET) structure with spacer engineering. The results obtained from this simulation work indicate that $\text{M}_{\textbf {ch}}$ -step FinFET is a good competitor for future improvisation of CMOS technology. The proposed device has improved drain conductivity, transconductance ( ${\textbf G_{m}}$ ), intrinsic gain ( ${\textbf A_{v}}$ ), and drain conductance ( ${\textbf G_{d}}$ ) performance by introducing high-K dielectric spacer material by 38.2%, 46.12%, 88.57%, and 22.55%, respectively. The proposed device with a spacer is preferable to obtain better performance regarding ON current and device efficiency.

Keywords

• Semiconductor device
• short channel effect (SCE)
• subthreshold swing (SS)
• bipolar junction transistor (BJT)