Simulation study of a novel AlGaN/GaN L‐FER with ultralow turn‐on voltage and low reverse leakage

Abstract

Abstract In this work, a novel AlGaN/GaN lateral field‐effect rectifier (L‐FER) with ultralow turn‐on voltage (VT) and low reverse leakage current (IR) is proposed and verified by technology computer aided design (TCAD) Sentaurus. Through shortly contacting the short‐channel metal–oxide–semiconductor (MOS) structure with an Ohmic‐contact structure as the anode of the proposed L‐FER, an ultralow VT can be realized. And by inserting a floating clamp (FC) electrode near the cathode‐side MOS edge, the transverse channel potential at the MOS edge could be clamped to a small value. Thus, the high IR induced by the short‐channel effect in the MOS structure could be suppressed. In contrast to the conventional short‐channel L‐FER, the proposed FC‐L‐FER exhibits about four orders of magnitude reduction in IR, without obvious degeneration in the forward current and VT. Moreover, the proposed FC‐L‐FER also delivers excellent reverse recovery characteristics.