Improved buildup model for radiation-induced, defects in MOSFET isolation oxides

Abstract

Ionizing radiation induces defects in STI oxides in current MOSFETs. These defects may degrade the performance of the MOS circuit. Analytical models for the buildup of these defects during the radiation exposure are available in literature. In this paper, we introduce an improved model to estimate the buildup of defects that is valid for both low and high radiation doses. Our improved model is compared to published data showing its validity.

Keywords

• Total ionizing dose
• Oxide traps
• Interface traps
• Analytical model