Tunable doping in PbS nanocrystal field-effect transistors using surface molecular dipoles
Mohamad I. Nugraha,
Hiroyuki Matsui,
Satria Z. Bisri,
Mykhailo Sytnyk,
Wolfgang Heiss,
Maria A. Loi,
Jun Takeya
Affiliations
Mohamad I. Nugraha
Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, Groningen 9747AG, The Netherlands
Hiroyuki Matsui
Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, 5–1–5 Kashiwanoha, Kashiwa, Chiba 277–8561, Japan
Satria Z. Bisri
Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, Groningen 9747AG, The Netherlands
Mykhailo Sytnyk
Materials for Electronics and Energy Technology (i-MEET), Friedrich-Alexander-Universität Erlangen-Nürnberg, Martensstraße 7, 91058 Erlangen, Germany and Energie Campus Nürnberg (EnCN), Fürther Straße 250, 90429 Nürnberg, Germany
Wolfgang Heiss
Materials for Electronics and Energy Technology (i-MEET), Friedrich-Alexander-Universität Erlangen-Nürnberg, Martensstraße 7, 91058 Erlangen, Germany and Energie Campus Nürnberg (EnCN), Fürther Straße 250, 90429 Nürnberg, Germany
Maria A. Loi
Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, Groningen 9747AG, The Netherlands
Jun Takeya
Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, 5–1–5 Kashiwanoha, Kashiwa, Chiba 277–8561, Japan
We study the effect of self-assembled monolayer (SAM) treatment of the SiO2 dielectric on the electrical characteristics of PbS transistors. Using SAMs, we observe threshold voltage shifts in the electron transport, allowing us to tune the electrical properties of the devices depending on the SAM molecule used. Moreover, the use of a specific SAM improves the charge carrier mobility in the devices by a factor of three, which is attributed to the reduced interface traps due to passivated silanol on the SiO2 surface. These reduced traps confirm that the voltage shifts are not caused by the trap states induced by the SAMs.
