Scientific Reports (Jul 2018)

High-Performance Photodiode-Type Photodetectors Based on Polycrystalline Formamidinium Lead Iodide Perovskite Thin Films

  • Meng Zhang,
  • Fan Zhang,
  • Yue Wang,
  • Lijie Zhu,
  • Yufeng Hu,
  • Zhidong Lou,
  • Yanbing Hou,
  • Feng Teng

DOI
https://doi.org/10.1038/s41598-018-29147-6
Journal volume & issue
Vol. 8, no. 1
pp. 1 – 9

Abstract

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Abstract Photodetectors based on three dimensional organic–inorganic lead halide perovskites have recently received significant attention. As a new type of light-harvesting materials, formamidinium lead iodide (FAPbI3) is known to possess excellent optoelectronic properties even exceeding those of methylammonium lead iodide (MAPbI3). To date, only a few photoconductor-type photodetectors based on FAPbI3 single crystals and polycrystalline thin films in a lateral structure have been reported. Here, we demonstrate low-voltage, high-overall-performance photodiode-type photodetectors in a sandwiched geometry based on polycrystalline α-FAPbI3 thin films synthesized by a one-step solution processing method and post-annealing treatment. The photodetectors exhibit a broadband response from the near-ultraviolet to the near-infrared (330–800 nm), achieving a high on/off current ratio of 8.6 × 104 and fast response times of 7.2/19.5 μs. The devices yield a photoresponsivity of 0.95 AW−1 and a high specific detectivity of 2.8 × 1012 Jones with an external quantum efficiency (EQE) approaching 182% at −1.0 V under 650 nm illumination. The photodiode-type photodetectors based on polycrystalline α-FAPbI3 thin films with superior performance consequently show great promise for future optoelectronic device applications.