Research Progress of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes
Ruiqiang Xu,
Qiushi Kang,
Youwei Zhang,
Xiaoli Zhang,
Zihui Zhang
Affiliations
Ruiqiang Xu
Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Physics and Opto-Electronic Engineering, Guangdong University of Technology, Guangzhou 510006, China
Qiushi Kang
School of Integrated Circuits, Guangdong University of Technology, Guangzhou 510006, China
Youwei Zhang
Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Physics and Opto-Electronic Engineering, Guangdong University of Technology, Guangzhou 510006, China
Xiaoli Zhang
Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Physics and Opto-Electronic Engineering, Guangdong University of Technology, Guangzhou 510006, China
Zihui Zhang
School of Integrated Circuits, Guangdong University of Technology, Guangzhou 510006, China
AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) have great application prospects in sterilization, UV phototherapy, biological monitoring and other aspects. Due to their advantages of energy conservation, environmental protection and easy miniaturization realization, they have garnered much interest and been widely researched. However, compared with InGaN-based blue LEDs, the efficiency of AlGaN-based DUV LEDs is still very low. This paper first introduces the research background of DUV LEDs. Then, various methods to improve the efficiency of DUV LED devices are summarized from three aspects: internal quantum efficiency (IQE), light extraction efficiency (LEE) and wall-plug efficiency (WPE). Finally, the future development of efficient AlGaN-based DUV LEDs is proposed.
