Carrier recombination suppression and transport enhancement enable high‐performance self‐powered broadband Sb2Se3 photodetectors
Shuo Chen,
Yi Fu,
Muhammad Ishaq,
Chuanhao Li,
Donglou Ren,
Zhenghua Su,
Xvsheng Qiao,
Ping Fan,
Guangxing Liang,
Jiang Tang
Affiliations
Shuo Chen
Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen Guangdong the People's Republic of China
Yi Fu
Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen Guangdong the People's Republic of China
Muhammad Ishaq
Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen Guangdong the People's Republic of China
Chuanhao Li
Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen Guangdong the People's Republic of China
Donglou Ren
MOE Key Laboratory of New Processing Technology for Non‐ferrous Metals and Materials, Guangxi Key Laboratory of Processing for Non‐ferrous Metals and Featured Materials Guangxi University Nanning Guangxi the People's Republic of China
Zhenghua Su
Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen Guangdong the People's Republic of China
Xvsheng Qiao
State Key Laboratory of Silicon Materials & School of Materials Science and Engineering Zhejiang University Hangzhou Zhejiang the People's Republic of China
Ping Fan
Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen Guangdong the People's Republic of China
Guangxing Liang
Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen Guangdong the People's Republic of China
Jiang Tang
Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information Huazhong University of Science and Technology Wuhan Hubei the People's Republic of China
Abstract Antimony selenide (Sb2Se3) is a promising candidate for photodetector applications boasting unique material benefits and remarkable optoelectronic properties. Achieving high‐performance self‐powered Sb2Se3 photodetector through a synergistic regulation of absorber layer and heterojunction interface demonstrates great potential and needs essential investigation. In this study, an effective two‐step thermodynamic/kinetic deposition technique containing sputtered and selenized Sb precursor is implemented to induce self‐assembled growth of Sb2Se3 light absorbing thin film with large crystal grains and desirable [hk1] orientation, presenting considerable thin‐film photodetector performance. Furthermore, aluminum (Al3+) cation dopant is introduced to modify the optoelectronic properties of CdS buffer layer, and further optimize the Sb2Se3/CdS (Al) heterojunction interface quality. Thanks to the suppressed carrier recombination and enhanced carrier transport kinetics, the champion Mo/Sb2Se3/CdS (Al)/ITO/Ag photodetector exhibits self‐powered and broadband characteristics, accompanied by simultaneously high responsivity of 0.9 A W−1 (at 11 nW cm−2), linear dynamic range of 120 dB, impressive ON/OFF switching ratio over 106 and signal‐to‐noise ratio of 109, record total noise determined realistic detectivity of 4.78 × 1012 Jones, and ultra‐fast response speed with rise/decay time of 24/75 ns, representing the top level for Sb2Se3‐based photodetectors. This intriguing work opens up an avenue for its self‐powered broadband photodetector applications.
