Epitaxial growth of 2.5-μm quaternary AlInGaN for n-cladding layer in GaN-based green laser diodes

Lingrong Jiang; Jianping Liu; Aiqin Tian; Masao Ikeda; Liqun Zhang; Peng Wu; Wei Zhou; Hui Yang

Fundamental Research (Nov 2021)

Epitaxial growth of 2.5-μm quaternary AlInGaN for n-cladding layer in GaN-based green laser diodes

Lingrong Jiang,
Jianping Liu,
Aiqin Tian,
Masao Ikeda,
Liqun Zhang,
Peng Wu,
Wei Zhou,
Hui Yang

Affiliations

Lingrong Jiang: Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China; School of Nano-tech and Nano-bionics, University of Science and Technology of China, Hefei 230026, China; Key Laboratory of Nanodevices and Applications, Chinese of Academy of Science, Suzhou 215123, China
Jianping Liu: Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China; School of Nano-tech and Nano-bionics, University of Science and Technology of China, Hefei 230026, China; Key Laboratory of Nanodevices and Applications, Chinese of Academy of Science, Suzhou 215123, China; Corresponding author.
Aiqin Tian: Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China; Key Laboratory of Nanodevices and Applications, Chinese of Academy of Science, Suzhou 215123, China
Masao Ikeda: Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China; Key Laboratory of Nanodevices and Applications, Chinese of Academy of Science, Suzhou 215123, China
Liqun Zhang: Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China; Key Laboratory of Nanodevices and Applications, Chinese of Academy of Science, Suzhou 215123, China
Peng Wu: Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China; Key Laboratory of Nanodevices and Applications, Chinese of Academy of Science, Suzhou 215123, China; School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
Wei Zhou: Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China; Key Laboratory of Nanodevices and Applications, Chinese of Academy of Science, Suzhou 215123, China
Hui Yang: Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China; School of Nano-tech and Nano-bionics, University of Science and Technology of China, Hefei 230026, China; Key Laboratory of Nanodevices and Applications, Chinese of Academy of Science, Suzhou 215123, China; School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China

Journal volume & issue: Vol. 1, no. 6
pp. 672 – 676

Abstract

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The ridge morphology, which is related to random atomic step meandering, appears in thick AlInGaN films grown by metal organic chemical vapor deposition on both GaN templates and free-standing GaN substrates; this can be primarily attributed to the in-plane compressive strain in the thick layer. Therefore, a 2.5-μm Al0.08In0.0123GaN film with a slightly tensive strain was grown, with a regular and smooth step-flow morphology; the root mean square deviation of the film (with a size of 5 μm × 5 μm) was 0.56 nm.

Published in Fundamental Research

ISSN: 2667-3258 (Online)
Publisher: KeAi Communications Co. Ltd.
Country of publisher: China
LCC subjects: Science: Science (General)
Website: https://www.keaipublishing.com/en/journals/fundamental-research/

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