Robust Ku-Band GaN Low-Noise Amplifier MMIC

Abstract

This paper employs the 0.2 μm ETRI GaN HEMT process on SiC to develop a Ku-band GaN low-noise amplifier monolithic microwave integrated circuit (MMIC) characterized by high-input power robustness for radar transceiver modules. A source degeneration inductor is employed to obtain the proposed amplifier’s stable operation and the compromised impedance trajectory of the maximum available gain and minimum noise figure. The analysis results show simultaneous gain and noise impedance matching, achieved using only a small number of passive elements. Furthermore, the proposed low-noise amplifier MMIC secures a linear gain of 21.3–22.6 dB, an input return loss of 19.6–21.4 dB, and a noise figure of 1.7–1.8 dB in the 15–16 GHz frequency range. It also exhibits an input 1 dB compression point of 0.4–1.5 dBm in the single-tone power test, and an input third-order intercept point of 5.8–10.1 dBm within the 15–16 GHz frequency range in the two-tone intermodulation distortion test.

Keywords

• gan
• hemt
• ku-band
• low-noise amplifier
• mmic
• source degeneration