Engineering structural homogeneity and magnetotransport in strained Nd2Ir2O7 films
Jeongkeun Song,
Eun Kyo Ko,
Sangmin Lee,
Junsik Mun,
Ji Hwan Jeong,
Jong Hwa Lee,
Woo Jin Kim,
Miyoung Kim,
Yangyang Li,
Ji Hye Lee,
Tae Won Noh
Affiliations
Jeongkeun Song
Department of Physics and Astronomy, Seoul National University, Seoul 08826, South Korea
Eun Kyo Ko
Department of Physics and Astronomy, Seoul National University, Seoul 08826, South Korea
Sangmin Lee
Department of Materials Science and Engineering and Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea
Junsik Mun
Department of Materials Science and Engineering and Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea
Ji Hwan Jeong
Department of Physics and Astronomy, Seoul National University, Seoul 08826, South Korea
Jong Hwa Lee
Department of Physics and Astronomy, Seoul National University, Seoul 08826, South Korea
Woo Jin Kim
Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA
Miyoung Kim
Department of Materials Science and Engineering and Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea
Yangyang Li
School of Physics, Shandong University, Jinan 250100, China
Ji Hye Lee
Department of Physics and Astronomy, Seoul National University, Seoul 08826, South Korea
Tae Won Noh
Department of Physics and Astronomy, Seoul National University, Seoul 08826, South Korea
The 5d pyrochlore iridate family (R2Ir2O7, where R is a rare earth ion) has garnered significant attention due to its topological properties, such as Weyl semimetallic phases and axion insulator. However, the investigation of these properties has been impeded by severe iridium loss during growth, which results in the formation of defects and impurities. Herein, we demonstrate a method for controlling impurities and defects in strained Nd2Ir2O7 (NIO-227) films by compensating for iridium loss during growth. By increasing the amount of IrO2 target ablated, we enhance the morphological quality and electrical transport properties of the fabricated films. Furthermore, our results show that the anomalous Hall effects of the films have a strong dependency on the amount of IrO2 target ablated, which is attributed to the structural inhomogeneity in the NIO-227 films. Our work provides a way to control defects and impurities and would promote the investigation of topological phases in the family R2Ir2O7.
