Dual-Tuned Terahertz Absorption Device Based on Vanadium Dioxide Phase Transition Properties
Ruyuan Zheng,
Yingting Yi,
Qianju Song,
Zao Yi,
Yougen Yi,
Shubo Cheng,
Jianguo Zhang,
Chaojun Tang,
Tangyou Sun,
Qingdong Zeng
Affiliations
Ruyuan Zheng
Joint Laboratory for Extreme Conditions Matter Properties, Key Laboratory of Manufacturing Process Testing Technology of Ministry of Education, State Key Laboratory of Environment-Friendly Energy Materials, Southwest University of Science and Technology, Mianyang 621010, China
Yingting Yi
College of Physics and Electronics, Central South University, Changsha 410083, China
Qianju Song
Joint Laboratory for Extreme Conditions Matter Properties, Key Laboratory of Manufacturing Process Testing Technology of Ministry of Education, State Key Laboratory of Environment-Friendly Energy Materials, Southwest University of Science and Technology, Mianyang 621010, China
Zao Yi
Joint Laboratory for Extreme Conditions Matter Properties, Key Laboratory of Manufacturing Process Testing Technology of Ministry of Education, State Key Laboratory of Environment-Friendly Energy Materials, Southwest University of Science and Technology, Mianyang 621010, China
Yougen Yi
College of Physics and Electronics, Central South University, Changsha 410083, China
Shubo Cheng
School of Physics and Optoelectronic Engineering, Yangtze University, Jingzhou 434023, China
Jianguo Zhang
Department of Physics, Jinzhong University, Jinzhong 030619, China
Chaojun Tang
College of Physics, Zhejiang University of Technology, Hangzhou 310023, China
Tangyou Sun
Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin 541004, China
Qingdong Zeng
School of Physics and Electronic-Information Engineering, Hubei Engineering University, Xiaogan 432000, China
In recent years, absorbers related to metamaterials have been heavily investigated. In particular, VO2 materials have received focused attention, and a large number of researchers have aimed at multilayer structures. This paper presents a new concept of a three-layer simple structure with VO2 as the base, silicon dioxide as the dielectric layer, and graphene as the top layer. When VO2 is in the insulated state, the absorber is in the closed state, Δf = 1.18 THz (absorption greater than 0.9); when VO2 is in the metallic state, the absorber is open, Δf = 4.4 THz (absorption greater than 0.9), with ultra-broadband absorption. As a result of the absorption mode conversion, a phenomenon occurs with this absorber, with total transmission and total reflection occurring at 2.4 THz (A = 99.45% or 0.29%) and 6.5 THz (A = 90% or 0.24%) for different modes. Due to this absorption property, the absorber is able to achieve full-transmission and full-absorption transitions at specific frequencies. The device has great potential for applications in terahertz absorption, terahertz switching, and terahertz modulation.
