A compact 60‐GHz on‐chip bandpass filter in GaAs technology

Abstract

Abstract A compact 60‐GHz on‐chip bandpass filter (BPF) is presented using gallium arsenide (GaAs) technology. To demonstrate the working mechanism of the proposed BPF, an inductor‐capacitor (LC) equivalent circuit model is conceived and analysed for further investigation of the transmission poles (TPs) and zeros. Finally, a prototype of the BPF is fabricated and tested to validate the proposed idea, whose simulated and measured results are in good agreement. The measurements show that it has a centre frequency of 60.2 GHz with a bandwidth of 14%, and the minimum insertion loss (IL) within the passband is 2.57 dB. The chip size, excluding the feedings, is about 0.265 mm × 0.184 mm.

Keywords

• band‐pass filters
• gallium arsenide