Quasi-dark resonances with antiferromagnetic order in silicon metasurfaces

Abstract

Abstract Quasi-dark resonances exhibiting antiferromagnetic order are theoretically investigated in a near-infrared metasurface composed of square slotted rings etched in a thin silicon layer on glass substrate. Access to the quasi-dark mode is achieved by reducing the symmetry of the metasurface according to the findings of a detailed group theory analysis. A thorough finite-element study reveals the key optical properties of the antiferromagnetic order quasi-dark mode, namely resonant wavelengths, quality factors, angular dispersion, and its robustness against optical extinction losses. It is demonstrated that the thickness of the silicon metasurface can adjust the asymmetry degree of the resonant Fano lineshape without affecting substantially its quality factor. Furthermore, tuning of the resonant wavelength can be achieved without significant modification of the Fano lineshape by controlling the angle of incidence of the impinging planewave. Overall, the work presents an all-dielectric, near-infrared metasurface for the excitation of sharp resonances with antiferromagnetic order, which can find use in emerging applications based on this particular configuration of artificial optical magnetism and/or strong field confinement and light-matter interaction.