Wafer-scale engineering of two-dimensional transition metal dichalcogenides
Xiang Lan,
Yingliang Cheng,
Xiangdong Yang,
Zhengwei Zhang
Affiliations
Xiang Lan
Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, Changsha 410083, China; College of Materials Science and Engineering, Hunan University, Changsha 410083, China
Yingliang Cheng
College of Materials Science and Engineering, Hunan University, Changsha 410083, China; Corresponding Author.
Xiangdong Yang
Institute of Micro/Nano Materials and Devices, Ningbo University of Technology, Ningbo 315211, China; Corresponding Author.
Zhengwei Zhang
Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, Changsha 410083, China; Corresponding Author.
ABSTRACT: Moore's Law has been the driving force behind the semiconductor industry for several decades, but as silicon-based transistors approach their physical limits, researchers are searching for new materials to sustain this exponential growth. Two-dimensional transition metal dichalcogenides (TMDs), with their atomically thin structure and enticing physical properties, have emerged as the most promising candidates for downsizing and improving device integration. Emboldened by the direction of achieving large-area and high-quality TMDs growth, wafer-scale TMDs growth strategies have been continuously developed, suggesting that TMDs are poised to become a new platform for next-generation electronic devices. In this review, advanced synthesis routes and inherent properties of wafer-scale TMDs were critically assessed. In addition, the performance in electronic devices was also discussed, providing an outlook on the opportunities and challenges that lie ahead in their development.
