Tekhnologiya i Konstruirovanie v Elektronnoi Apparature (Mar 2010)

Producing of pover GaAs structures of bipolar and field-effect transistor by CVD-method

  • Voronin V. A.,
  • Guba S. K.,
  • Kurilo I. V.

Journal volume & issue
no. 2
pp. 31 – 35

Abstract

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Investigation results in technology of doping Sn and Bi of perfect GaAs structures preparation by the lowe-temperature isothermal chloride epitaxy method are presented. A complex problem has been solved to obtain planar layers of the n+–n–n0–p type bipolar transistors and planar layers of the i–n0–n–n+ type Schottky field-effect transistors. Heterogenetty in the thickness less than 3% and doping level less than 5% has been achieved. This allowed to get the discrete Schottky field-effect transistors with improved operation characteristics.

Keywords