Active and Passive Electronic Components (Jan 2001)
Characterization of Series Resistances and Mobility Attenuation Phenomena in Short Channel MOS Transistors
Abstract
As the scaling proceeds, the transverse electric field increase, and a mobility attenuation phenomenon becomes of primordial interest. Indeed, the high transverse electric field is generally ascribed [1] to surface roughness scattering in the channel and consequently reduce effective mobility of carriers. In short channel MOSFET, the Source-Drain resistance Rsd influence strongly the effective mobility.
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