Characterization of Series Resistances and Mobility Attenuation Phenomena in Short Channel MOS Transistors

Abstract

As the scaling proceeds, the transverse electric field increase, and a mobility attenuation phenomenon becomes of primordial interest. Indeed, the high transverse electric field is generally ascribed [1] to surface roughness scattering in the channel and consequently reduce effective mobility of carriers. In short channel MOSFET, the Source-Drain resistance Rsd influence strongly the effective mobility.

Keywords

• MOS Transistor
• Surface roughness
• Effective mobility
• Series resistance.