Over 500°C stable transparent conductive oxide for optoelectronics
Peng Li,
Fangchao Li,
Jiani Ma,
Dong Lin,
Jiangang Ma,
Lizhi Ding,
Junjun Guo,
Xingzhong Cao,
Junwei Shi,
Haiyang Xu,
Yichun Liu
Affiliations
Peng Li
Key Laboratory of UV‐Emitting Materials and Technology, Ministry of Education Northeast Normal University Changchun China
Fangchao Li
Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application School of Physical Science and Technology, Suzhou University of Science and Technology Suzhou Jiangsu China
Jiani Ma
Key Laboratory of UV‐Emitting Materials and Technology, Ministry of Education Northeast Normal University Changchun China
Dong Lin
Key Laboratory of UV‐Emitting Materials and Technology, Ministry of Education Northeast Normal University Changchun China
Jiangang Ma
Key Laboratory of UV‐Emitting Materials and Technology, Ministry of Education Northeast Normal University Changchun China
Lizhi Ding
Key Laboratory of UV‐Emitting Materials and Technology, Ministry of Education Northeast Normal University Changchun China
Junjun Guo
Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University Suzhou Jiangsu China
Xingzhong Cao
Institute of High Energy Physics, Chinese Academy of Sciences Beijing China
Junwei Shi
Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University Suzhou Jiangsu China
Haiyang Xu
Key Laboratory of UV‐Emitting Materials and Technology, Ministry of Education Northeast Normal University Changchun China
Yichun Liu
Key Laboratory of UV‐Emitting Materials and Technology, Ministry of Education Northeast Normal University Changchun China
Abstract High‐temperature stable transparent conductive oxides (TCOs) are highly desirable in optoelectronics but are rarely achieved due to the defect generation that is inevitable during high‐temperature air annealing. This work reports unprecedented stability in aluminum and fluorine co‐doped ZnO (AFZO) films prepared by pulse laser deposition. The AFZO can retain a mobility of 60 cm2 V−1 s−1, an electron concentration of 4.5 × 1020 cm−3, and a visible transmittance of 91% after air‐annealing at 600°C. Comprehensive defect characterization and first principles calculations have revealed that the offset of substitutional aluminum by zinc vacancy is responsible for the instability observed in aluminum‐doped ZnO, and the pairing between fluorine substitution and zinc vacancy ensures the high‐temperature stability of AFZO. The utility of AFZO in enabling the epitaxial growth of (AlxGa1−x)2O3 film within a high‐temperature, oxygen‐rich environment is demonstrated, facilitating the development of a self‐powered solar‐blind ultraviolet Schottky photodiode. Furthermore, the high‐mobility AFZO transparent electrode enables perovskite solar cells to achieve improved power conversion efficiency by balancing the electron concentration‐dependent conductivity and transmittance. These findings settle the long‐standing controversy surrounding the instability in TCOs and open up exciting prospects for the advancement of optoelectronics.
