A Design Method to Improve Temperature Uniformity on Wafer for Rapid Thermal Processing

Electronics. 2018;7(10):213 DOI 10.3390/electronics7100213

 

Journal Homepage

Journal Title: Electronics

ISSN: 2079-9292 (Online)

Publisher: MDPI AG

LCC Subject Category: Technology: Electrical engineering. Electronics. Nuclear engineering: Electronics

Country of publisher: Switzerland

Language of fulltext: English

Full-text formats available: PDF, HTML, ePUB, XML

 

AUTHORS


Peng Huang (School of Physics and Electronics, Hunan University, Changsha 410082, China)

Hongguan Yang (School of Physics and Electronics, Hunan University, Changsha 410082, China)

EDITORIAL INFORMATION

Blind peer review

Editorial Board

Instructions for authors

Time From Submission to Publication: 11 weeks

 

Abstract | Full Text

Single-wafer rapid thermal processing (RTP) is widely used in semiconductor manufacturing. Achieving temperature uniformity on silicon wafer is a major challenge in RTP control. In this work, a lamp configuration including five concentric lamp zones is designed to obtain uniform temperature distribution on the wafer. An optics-based model is developed to determine the optimal lamp design parameters, and a uniformity criterion is proposed to evaluate the effective irradiance distribution of the tungsten–halogen lamps on the wafer. This method can be used to determine geometric parameters of the lamp array in order to achieve uniform temperature distribution on the wafer. A realistic simulation of a cold wall RTP system with five lamp rings and a 200-mm wafer is performed. The proposed model makes way for a simple method for determining the optimal lamp design parameters in RTP systems.