Enhanced process stability for the low temperature sputter deposition of aluminium nitride thin films

Abstract

MEMS (micro electro-mechanical systems) operated in resonance and excited piezoelectrically are nowadays used for a broad range of different application scenarios. To enhance the process stability and hence, the reproducibility of key film parameters of sputter-deposited aluminium nitride such as the film stress, the piezoelectric coefficient d _33 and low leakage current levels, a novel aluminium clamped substrate holder is reported. Compared to the standard molybdenum based solution, where the thermal contact between the wafer and substrate holder varies during deposition, as the wafer can move freely, the substrate temperature variations are substantially reduced due to clamped configuration. Independent of AlN film thickness ranging between 0.5 μ m and 2.0 μ m the scatter in piezoelectric constant d _33 and leakage current characteristics represented by the barrier height and the activation energy is reduced up to a factor of 3. These results demonstrate the importance to control carefully the temperature conditions during low-temperature AlN deposition to ensure a high reproducibility in film properties.

Keywords

• d33
• leakage current
• piezoelectric coefficient
• AlN
• thin film deposition
• clamped substrate holder