International Journal of Photoenergy (Jan 2012)

Impedance Spectroscopic Study of p-i-n Type a-Si Solar Cell by Doping Variation of p-Type Layer

  • Sunhwa Lee,
  • Seungman Park,
  • Jinjoo Park,
  • Youngkuk Kim,
  • Hyeongsik Park,
  • Juyeun Jang,
  • Chonghoon Shin,
  • Youn-Jung Lee,
  • Seungsin Baek,
  • Minbum Kim,
  • Junhee Jung,
  • Junsin Yi

DOI
https://doi.org/10.1155/2012/767248
Journal volume & issue
Vol. 2012

Abstract

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We investigated p-i-n type amorphous silicon (a-Si) solar cell where the diborane flow rate of the p-type layer was varied and the solar cell was measured static/dynamic characteristics. The p/i interface of the thin film amorphous silicon solar cells was studied in terms of the coordination number of boron atoms in the p layer. p-type layer and p/i interface properties were obtained from the X-ray photoelectron spectroscopy (XPS) and impedance spectroscopy. One of the solar cells shows open circuit voltage (𝑉oc)=880 mV, short circuit current density (𝐽sc)=14.21 mA/cm2, fill factor (FF)=72.03%, and efficiency (𝜂)=8.8% while the p-type layer was doped with 0.1%. The impedance spectroscopic measurement showed that the diode ideality factor and built-in potential changed with change in diborane flow rate.