Matter and Radiation at Extremes (Sep 2023)

The near-room-temperature upsurge of electrical resistivity in Lu-H-N is not superconductivity, but a metal-to-poor-conductor transition

  • Di Peng,
  • Qiaoshi Zeng,
  • Fujun Lan,
  • Zhenfang Xing,
  • Yang Ding,
  • Ho-kwang Mao

DOI
https://doi.org/10.1063/5.0166430
Journal volume & issue
Vol. 8, no. 5
pp. 058401 – 058401-3

Abstract

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The recent report of superconductivity in nitrogen-doped lutetium hydride (Lu-H-N) at 294 K and 1 GPa brought hope for long-sought-after ambient-condition superconductors. However, the failure of scientists worldwide to independently reproduce these results has cast intense skepticism on this exciting claim. In this work, using a reliable experimental protocol, we synthesized Lu-H-N while minimizing extrinsic influences and reproduced the sudden change in resistance near room temperature. With quantitative comparison of the temperature-dependent resistance between Lu-H-N and the pure lutetium before reaction, we were able to clarify that the drastic resistance change is most likely caused by a metal-to-poor-conductor transition rather than by superconductivity. Herein, we also briefly discuss other issues recently raised in relation to the Lu-H-N system.