Structure evolution of the interfacial layer of BaTiO3 thin films during annealing process and related good resistive switching behaviors
Zixiong Sun,
Sizhao Huang,
Wenxuan Zhu,
Yorick A. Birkhölzer,
Xing Gao,
Romar Angelo Avila,
Houbing Huang,
Xiaojie Lou,
Evert P. Houwman,
Minh D. Nguyen,
Gertjan Koster,
Guus Rijnders
Affiliations
Zixiong Sun
MESA+ Institute of Nanotechnology, University of Twente, P.O. Box 217, Enschede 7500 AE, The Netherlands
Sizhao Huang
MESA+ Institute of Nanotechnology, University of Twente, P.O. Box 217, Enschede 7500 AE, The Netherlands
Wenxuan Zhu
School of Materials Science and Engineering and Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing 100081, China
Yorick A. Birkhölzer
MESA+ Institute of Nanotechnology, University of Twente, P.O. Box 217, Enschede 7500 AE, The Netherlands
Xing Gao
MESA+ Institute of Nanotechnology, University of Twente, P.O. Box 217, Enschede 7500 AE, The Netherlands
Romar Angelo Avila
MESA+ Institute of Nanotechnology, University of Twente, P.O. Box 217, Enschede 7500 AE, The Netherlands
Houbing Huang
School of Materials Science and Engineering and Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing 100081, China
Xiaojie Lou
Frontier Institute of Science and Technology, State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China
Evert P. Houwman
MESA+ Institute of Nanotechnology, University of Twente, P.O. Box 217, Enschede 7500 AE, The Netherlands
Minh D. Nguyen
MESA+ Institute of Nanotechnology, University of Twente, P.O. Box 217, Enschede 7500 AE, The Netherlands
Gertjan Koster
MESA+ Institute of Nanotechnology, University of Twente, P.O. Box 217, Enschede 7500 AE, The Netherlands
Guus Rijnders
MESA+ Institute of Nanotechnology, University of Twente, P.O. Box 217, Enschede 7500 AE, The Netherlands
BaTiO3 thin films with different annealing times were grown on LSMO/STO (001) substrates by pulsed laser deposition. An interesting phenomenon of loss-and-reappearance of the interfacial layer in BaTiO3 was detected in the x-ray diffraction results, and the ordered–unordered–ordered lattice transformation caused by oxygen vacancies’ filling was thought to be the reason. The ferroelectric domain was also confirmed to form during such an annealing process according to the piezoresponse force microscopy, transmission electron microscopy, and phase-field simulation. A Ti-displacement-rotation region considered an intermediate structure during the domain formation was observed at the interfacial layer of the 5.5-min-annealing film. Because of the oxygen deficiency and the effect of ferroelectric domain modulation of the built-in barrier height, a good memristive behavior with a resistive switching ratio of 1916 was obtained in the 10-min-annealing BaTiO3 (BTO) film, offering an avenue toward the application of oxygen-deficient BTO in neural network applications.
