We have looked into cobalt disilicide (CoSi2) as a potential building block for superconducting quantum circuits. In order to achieve this, we annealed a thin layer of Co to create microwave cavities with thickness of d = 10–105 nm from CoSi2 embedded in the silicon substrate. The cavity properties were measured as a function of temperature and power. In the films measuring 10 and 25 nm, we find a significant kinetic inductance LK with a non-BCS power-law variation δLK ∝ T4.3±0.2 at low temperatures. The quality factor of the studied microwave resonances varied from 3 × 103 (d = 10 nm) to ∼5 × 104 (d = 105 nm) and increased as d(A − log d) with thickness, with two-level systems having very little effect. The power dependence of kinetic inductance was analyzed in terms of heat flow due to electron–phonon coupling, which was found to be stronger than estimated for heat relaxation by regular quasiparticles.
