Pressure-induced concomitant topological and metal-insulator quantum phase transitions in Ce3Pd3Bi4

Abstract

Abstract The electronic property and magnetic susceptibility of Ce3Pd3Bi4 were systemically investigated from 18 to 290 K for varying values of cell volume using dynamic mean-field theory coupled with density functional theory. By extrapolating to zero temperature, the ground state of Ce3Pd3Bi4 at ambient pressure is found to be a correlated semimetal due to insufficient hybridization. Upon applying pressure, the hybridization strength increases and a crossover to the Kondo insulator is observed at finite temperatures. The characteristic temperature signaling the formation of Kondo singlet, as well as the characteristic temperature associated with f-electron delocalization–localization change, simultaneously vanishes around a critical volume of 0.992 V 0, suggesting that such metal–insulator transition is possibly associated with a quantum critical point. Finally, Wilson’s loop calculations indicate that the Kondo insulating side is topologically trivial, thus a topological transition also occurs across the quantum critical point.