Zero-static power radio-frequency switches based on MoS2 atomristors

Myungsoo Kim; Ruijing Ge; Xiaohan Wu; Xing Lan; Jesse Tice; Jack C. Lee; Deji Akinwande

doi:10.1038/s41467-018-04934-x

Nature Communications (Jun 2018)

Zero-static power radio-frequency switches based on MoS2 atomristors

Myungsoo Kim,
Ruijing Ge,
Xiaohan Wu,
Xing Lan,
Jesse Tice,
Jack C. Lee,
Deji Akinwande

Affiliations

Myungsoo Kim: Microelectronics Research Center, The University of Texas at Austin
Ruijing Ge: Microelectronics Research Center, The University of Texas at Austin
Xiaohan Wu: Microelectronics Research Center, The University of Texas at Austin
Xing Lan: NG Next, Northrop Grumman Corporation
Jesse Tice: NG Next, Northrop Grumman Corporation
Jack C. Lee: Microelectronics Research Center, The University of Texas at Austin
Deji Akinwande: Microelectronics Research Center, The University of Texas at Austin

DOI: https://doi.org/10.1038/s41467-018-04934-x
Journal volume & issue: Vol. 9, no. 1
pp. 1 – 7

Abstract

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The wide application of wireless communications in various technologies calls for the development of robust yet compact radio-frequency switches. Here, Kim et al. utilize MoS2 based non-volatile memristors to switch up to THz frequencies in sub µm2 areas, whilst the switches consume zero-static energy.

Published in Nature Communications

ISSN: 2041-1723 (Online)
Publisher: Nature Portfolio
Country of publisher: United Kingdom
LCC subjects: Science
Website: https://www.nature.com/ncomms/

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