Demonstration of Diode-Pumped Yb:LaF3 and Tm,Ho:LaF3 Lasers

Chun Li; Yuxin Leng; Shanming Li; Yin Hang

doi:10.3390/app9020334

Applied Sciences (Jan 2019)

Demonstration of Diode-Pumped Yb:LaF3 and Tm,Ho:LaF3 Lasers

Chun Li,
Yuxin Leng,
Shanming Li,
Yin Hang

Affiliations

Chun Li: School of Physics Science and Engineering, Tongji University, Shanghai 200092, China
Yuxin Leng: State Key Laboratory of High Field Laser Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
Shanming Li: Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
Yin Hang: Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China

DOI: https://doi.org/10.3390/app9020334
Journal volume & issue: Vol. 9, no. 2
p. 334

Abstract

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Diode-pumped solid-state lasers using novel Yb:LaF3 and Tm,Ho:LaF3 crystals as laser gain materials are demonstrated herein. The Yb:LaF3 and Tm,Ho:LaF3 crystals were grown using the Bridgman method. By matching their absorption bands, continuous-wave laser operations were achieved for the first time. The Yb:LaF3 laser obtained a maximum average output power of 1.19 W with dual wavelengths of 1028 nm and 1033 nm. The maximum average output power and slope efficiency of the Tm,Ho:LaF3 laser were 574 mW and 18.5%, respectively. The Tm,Ho:LaF3 laser exhibited two peaks at 2043 nm and 2048 nm. Both the Yb:LaF3 and Tm,Ho:LaF3 crystals were confirmed to be laser gain materials.

Published in Applied Sciences

ISSN: 2076-3417 (Online)
Publisher: MDPI AG
Country of publisher: Switzerland
LCC subjects: Technology: Engineering (General). Civil engineering (General); Science: Biology (General); Science: Physics; Science: Chemistry
Website: http://www.mdpi.com/journal/applsci

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