Reducing Dzyaloshinskii-Moriya interaction and field-free spin-orbit torque switching in synthetic antiferromagnets

Ruyi Chen; Qirui Cui; Liyang Liao; Yingmei Zhu; Ruiqi Zhang; Hua Bai; Yongjian Zhou; Guozhong Xing; Feng Pan; Hongxin Yang; Cheng Song

doi:10.1038/s41467-021-23414-3

Nature Communications (May 2021)

Reducing Dzyaloshinskii-Moriya interaction and field-free spin-orbit torque switching in synthetic antiferromagnets

Ruyi Chen,
Qirui Cui,
Liyang Liao,
Yingmei Zhu,
Ruiqi Zhang,
Hua Bai,
Yongjian Zhou,
Guozhong Xing,
Feng Pan,
Hongxin Yang,
Cheng Song

Affiliations

Ruyi Chen: Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Beijing Innovation Center for Future Chip, Tsinghua University
Qirui Cui: Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences
Liyang Liao: Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Beijing Innovation Center for Future Chip, Tsinghua University
Yingmei Zhu: Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences
Ruiqi Zhang: Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Beijing Innovation Center for Future Chip, Tsinghua University
Hua Bai: Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Beijing Innovation Center for Future Chip, Tsinghua University
Yongjian Zhou: Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Beijing Innovation Center for Future Chip, Tsinghua University
Guozhong Xing: Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences
Feng Pan: Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Beijing Innovation Center for Future Chip, Tsinghua University
Hongxin Yang: Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences
Cheng Song: Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Beijing Innovation Center for Future Chip, Tsinghua University

DOI: https://doi.org/10.1038/s41467-021-23414-3
Journal volume & issue: Vol. 12, no. 1
pp. 1 – 9

Abstract

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Synthetic antiferromagnets (SAF), formed out of alternating layers of a ferromagnet with neutral spacer combine technologically appealing properties of both antiferromagnets and ferromagnets. Here, Chen et al demonstrate controlled switching of an SAF, without the need for an applied magnetic field.

Published in Nature Communications

ISSN: 2041-1723 (Online)
Publisher: Nature Portfolio
Country of publisher: United Kingdom
LCC subjects: Science
Website: https://www.nature.com/ncomms/

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